| PART |
Description |
Maker |
| SKDH116-L75 SKDH116_12-L75 SKDH116_16-L75 SKDH116/ |
三相整流桥IGBT的制动斩波器
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.15; |yfs| (S) typ: 0.029; PG (dB) typ: 22; Ciss (pF) typ: 2.1; NF (dB) typ: 1.75; IDSS (mA): -; Package: MPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| U1GU44 |
SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 05J4B48 05B4B48 05G4B48 05J.B48 |
Silicon Diffused Type Rectifier Stack
|
GOOD-ARK[GOOD-ARK Electronics]
|
| BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa
200V NPN silicon transistot, diffused mesa
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 6A条一（c）|3
NPN SILICON TRANSISTORS DIFFUSED MESA
180V NPN silicon transistot, diffused mesa
|
Cypress Semiconductor, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
Comset Semiconductors
|
| DSA26 DSA26G |
Diffused Junction Type Silicon Diode 2.6A Power Rectifier
|
SANYO
|
| DS135 |
Diffused Junction Type Silicon Diode 1.0A Power Rectifier
|
SANYO
|
|
